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Wide Band Gap Semiconductor Technology State Key Laboratory

Time: Sep 2, 2014

Wide Band Gap Semiconductor Technology State Key Laboratory is the key laboratory reorganizing the Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, the Ministry of Education, in 2007. It mainly conducts applied basic research on wide band gap semiconductor materials and devices. It is Xidian University’s base for training national IC talents,and an important support for the national key disciplines of “microelectronics”and “solid electronics”.

The Laboratory started the scientific research on wide band gap semiconductors andrelated   talents cultivation in the 1990s. At present, it has become an important base for scientific research, talents cultivation, academic exchange and technical transfer in the field both home and abroad. In 2008, it became the national defense sci-tech innovation team of China.  

The Laboratory possesses equipments for manufacturing wide band gap materials,materials manufacturing technology, manufacturing technology for microwave power devices and tube cores of high brightness LED devices, and quite a few own key techniques for microwave power modules, micro-nanometer device reliability and VLSI circuit design which have marked features.

The Laboratory pays attention to the application of their research, with many achievements applied in the national projects and national defense projects. Its high-quality GaN and SiC material epitaxial wafers can be batch manufactured for large-scale usage in enterprises and research institutes. Its microwave power devices have been used in national key projects. The GaN LED has become the core technology of semiconductor lighting in Shaanxi Province,which plays a radiating and promoting role. Its own MOCVD device and relatedcore technology are in the process of industrialization. Its micro-nanometerdevice reliability technology has played an important role in promoting the development of ICs with high reliability in China.  

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