The Laboratory was established in 2000 and approved as an open laboratory by the Chinese Ministry of Education in 2004. With broader research areas, the Laboratory was renamed as the Key Laboratory of Wide Band Gap Semiconductor Materials and Devices by the Ministry of Education in 2005. The total floor space of the Lab is about 1,000 square meters. Supported by the government, the Lab is the main member of Research and Development Centers for Wide Band-Gap Semiconductor Materials and Devices in China. The Lab has advanced facilities for research and teaching and a first-class faculty. It has a complete IC development and processing line as compared to some other universities in mainland China. It is the center for educating high-quality scientists and engineers in the field of Wide Band-Gap Semiconductor Materials and Devices. Extensions of the Lab have been completed and put into service.
The Lab's research focuses on Wide Band-Gap Semiconductor Materials and Devices, processing and equipments. The main research areas are as follows：
-Growth and Characterization of GaN and SiC Materials
-Fabrication of GaN and SiC-based Devices
-Wide Band-Gap Semiconductor Circuit
The Lab has sixty regular members, among whom around 70% are under the age of forty and over 50% are PhD holders. Over 400 papers have been published in overseas and domestic core publications; 13 monographs have been published; 10 patents for invention have been obtained; 3 international academic conferences have been held, and more than 50 people have been invited to give special presentations. 10 projects have won provincial and ministerial prizes.
On average, the annual research funds of the Lab total at about 30 million RMB. It has undertaken over 100 research projects with major output, which have exerted huge social and economic impact.
At present, the Lab is widely known nationally and internationally for its work on theoretical research and product development.